Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
ES1J R3G, Taiwan Semiconductor, Discrete Semiconductor Products~Diodes - Rectifiers - Single, DIODE GEN PURP 600V 1A DO214AC
Product Attributes：
Part Number: ES1J R3G
Manufacturer: Taiwan Semiconductor
Description: DIODE GEN PURP 600V 1A DO214AC
Category: Discrete Semiconductor Products~Diodes - Rectifiers - Single
ES1J R3G Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
BRIDGE RECT 1P 800V 1.5A DBLS
DIODE ZENER 3.3V 1.3W DO204AL
BRIDGE RECT 1PHASE 200V 3A KBP
DIODE SCHOTTKY 20V 1A DO204AL
TVS DIODE 100VWM 162VC DO214AB
DIODE GEN PURP 600V 8A TO220AC
Product Specifications：
Manufacturer Product Number: ES1J R3GMfr: Taiwan Semiconductor CorporationDetailed Description: DIODE GEN PURP 600V 1A DO214ACProduct Category: Discrete Semiconductor Products~Diodes - Rectifiers - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: -Part Status: ActiveDiode Type: StandardVoltage - DC Reverse (Vr) (Max): 600 VCurrent - Average Rectified (Io): 1AVoltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 ASpeed: Fast Recovery =< 500ns, > 200mA (Io)Reverse Recovery Time (trr): 35 nsCurrent - Reverse Leakage @ Vr: 5 µA @ 600 VCapacitance @ Vr, F: 18pF @ 4V, 1MHzMounting Type: Surface MountPackage / Case: DO-214AC, SMAOperating Temperature - Junction: -55°C ~ 150°CES1J R3G | Taiwan Semiconductor | NHE Electronics
ES1J R3G were obtained directly from authorized Taiwan Semiconductor distributors and other trusted sources throughout the world.
