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ES2JAHR3G, Taiwan Semiconductor, Discrete Semiconductor Products~Diodes - Rectifiers - Single, DIODE GEN PURP 600V 2A DO214AC
Product Attributes:
Part Number: ES2JAHR3G
Manufacturer: Taiwan Semiconductor
Description: DIODE GEN PURP 600V 2A DO214AC
Category: Discrete Semiconductor Products~Diodes - Rectifiers - Single
ES2JAHR3G Datasheet (PDF)
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Product Specifications:
Manufacturer Product Number: ES2JAHR3GMfr: Taiwan Semiconductor CorporationDetailed Description: DIODE GEN PURP 600V 2A DO214ACProduct Category: Discrete Semiconductor Products~Diodes - Rectifiers - SinglePackage: Tape & Reel (TR)Series: Automotive, AEC-Q101Part Status: ActiveDiode Type: StandardVoltage - DC Reverse (Vr) (Max): 600 VCurrent - Average Rectified (Io): 2AVoltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 ASpeed: Fast Recovery =< 500ns, > 200mA (Io)Reverse Recovery Time (trr): 35 nsCurrent - Reverse Leakage @ Vr: 10 µA @ 600 VCapacitance @ Vr, F: 20pF @ 4V, 1MHzMounting Type: Surface MountPackage / Case: DO-214AC, SMAOperating Temperature - Junction: -55°C ~ 150°CES2JAHR3G | Taiwan Semiconductor | NHE Electronics
ES2JAHR3G were obtained directly from authorized Taiwan Semiconductor distributors and other trusted sources throughout the world.