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ES3DVHM6G, Taiwan Semiconductor, Discrete Semiconductor Products~Diodes - Rectifiers - Single, DIODE GEN PURP 200V 3A DO214AB
Product Attributes:
Part Number: ES3DVHM6G
Manufacturer: Taiwan Semiconductor
Description: DIODE GEN PURP 200V 3A DO214AB
Category: Discrete Semiconductor Products~Diodes - Rectifiers - Single
ES3DVHM6G Datasheet (PDF)
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DIODE GEN PURP 200V 3A DO214AA
Product Specifications:
Manufacturer Product Number: ES3DVHM6GMfr: Taiwan Semiconductor CorporationDetailed Description: DIODE GEN PURP 200V 3A DO214ABProduct Category: Discrete Semiconductor Products~Diodes - Rectifiers - SinglePackage: Tape & Reel (TR)Series: Automotive, AEC-Q101Part Status: ActiveDiode Type: StandardVoltage - DC Reverse (Vr) (Max): 200 VCurrent - Average Rectified (Io): 3AVoltage - Forward (Vf) (Max) @ If: 900 mV @ 3 ASpeed: Fast Recovery =< 500ns, > 200mA (Io)Reverse Recovery Time (trr): 20 nsCurrent - Reverse Leakage @ Vr: 10 µA @ 200 VCapacitance @ Vr, F: 45pF @ 4V, 1MHzMounting Type: Surface MountPackage / Case: DO-214AB, SMCOperating Temperature - Junction: -55°C ~ 150°CES3DVHM6G | Taiwan Semiconductor | NHE Electronics
ES3DVHM6G were obtained directly from authorized Taiwan Semiconductor distributors and other trusted sources throughout the world.