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ESH3B V6G, Taiwan Semiconductor, Discrete Semiconductor Products~Diodes - Rectifiers - Single, DIODE GEN PURP 100V 3A DO214AB
Product Attributes：
Part Number: ESH3B V6G
Manufacturer: Taiwan Semiconductor
Description: DIODE GEN PURP 100V 3A DO214AB
Category: Discrete Semiconductor Products~Diodes - Rectifiers - Single
ESH3B V6G Datasheet (PDF)
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DIODE ZENER 3.9V 500MW MINI MELF
TRANSISTOR, NPN, 30V, 0.1A, 200A
MOSFET N-CH 500V 7.2A TO252
TVS DIODE 43.6VWM 70.1VC DO214AA
DIODE ZENER 39V 1.25W DO214AC
TVS DIODE 14VWM 23.2VC DO214AC
Product Specifications：
Manufacturer Product Number: ESH3B V6GMfr: Taiwan Semiconductor CorporationDetailed Description: DIODE GEN PURP 100V 3A DO214ABProduct Category: Discrete Semiconductor Products~Diodes - Rectifiers - SinglePackage: Tape & Reel (TR)Series: -Part Status: ActiveDiode Type: StandardVoltage - DC Reverse (Vr) (Max): 100 VCurrent - Average Rectified (Io): 3AVoltage - Forward (Vf) (Max) @ If: -Speed: Fast Recovery =< 500ns, > 200mA (Io)Reverse Recovery Time (trr): 20 nsCurrent - Reverse Leakage @ Vr: 5 µA @ 100 VCapacitance @ Vr, F: 45pF @ 4V, 1MHzMounting Type: Surface MountPackage / Case: DO-214AB, SMCOperating Temperature - Junction: -55°C ~ 175°CESH3B V6G | Taiwan Semiconductor | NHE Electronics
ESH3B V6G were obtained directly from authorized Taiwan Semiconductor distributors and other trusted sources throughout the world.
