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HS3M V6G, Taiwan Semiconductor, Discrete Semiconductor Products~Diodes - Rectifiers - Single, DIODE GEN PURP 3A DO214AB
Product Attributes：
Part Number: HS3M V6G
Manufacturer: Taiwan Semiconductor
Description: DIODE GEN PURP 3A DO214AB
Category: Discrete Semiconductor Products~Diodes - Rectifiers - Single
HS3M V6G Datasheet (PDF)
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BRIDGE RECT 1PHASE 200V 8A TS-6P
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DIODE GEN PURP 800V 1A DO204AL
TVS DIODE 36.8VWM 59.3VC DO204AL
BRIDGE RECT 1P 1KV 25A GBPC-M
DIODE ZENER 51V 800MW SUB SMA
Product Specifications：
Manufacturer Product Number: HS3M V6GMfr: Taiwan Semiconductor CorporationDetailed Description: DIODE GEN PURP 3A DO214ABProduct Category: Discrete Semiconductor Products~Diodes - Rectifiers - SinglePackage: Tape & Reel (TR)Series: -Part Status: ActiveDiode Type: StandardVoltage - DC Reverse (Vr) (Max): -Current - Average Rectified (Io): 3AVoltage - Forward (Vf) (Max) @ If: -Speed: Fast Recovery =< 500ns, > 200mA (Io)Reverse Recovery Time (trr): 75 nsCurrent - Reverse Leakage @ Vr: 10 µA @ 1000 VCapacitance @ Vr, F: 50pF @ 4V, 1MHzMounting Type: Surface MountPackage / Case: DO-214AB, SMCOperating Temperature - Junction: -55°C ~ 150°CHS3M V6G | Taiwan Semiconductor | NHE Electronics
HS3M V6G were obtained directly from authorized Taiwan Semiconductor distributors and other trusted sources throughout the world.
