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TSM2537CQ RFG, Taiwan Semiconductor, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, MOSFET N/P-CH 20V 11.6A/9A 6TDFN
BRIDGE RECT 1PHASE 1KV 2A DBLS
DIODE GEN PURP 600V 3A DO214AA
TVS DIODE 120VWM 193VC DO214AC
TVS DIODE 5VWM 9.2VC DO214AA
TVS DIODE 28.2VWM 45.7VC DO201
DIODE GEN PURP 600V 1.5A DO214AC
Product Specifications:
MfrPart.: TSM2537CQ RFGMfr: Taiwan Semiconductor CorporationDescription: MOSFET N/P-CH 20V 11.6A/9A 6TDFNProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - ArraysPackage: Tape & Reel (TR),Cut Tape (CT)Series: -PartStatus: ActiveFETType: N and P-ChannelFETFeature: Logic Level Gate, 1.8V DriveDraintoSourceVoltage(Vdss): 20VCurrent-ContinuousDrain(Id)@25°C: 11.6A (Tc), 9A (Tc)RdsOn(Max)@IdVgs: 30mOhm @ 6.4A, 4.5V, 55mOhm @ 5A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 9.1nC @ 4.5V, 9.8nC @ 4.5VInputCapacitance(Ciss)(Max)@Vds: 677pF @ 10V, 744pF @ 10VPower-Max: 6.25WOperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountPackage/Case: 6-VDFN Exposed PadTSM2537CQ RFG | Taiwan Semiconductor | NHE Electronics
TSM2537CQ RFG were obtained directly from authorized Taiwan Semiconductor distributors and other trusted sources throughout the world.