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    TSM60NB190CM2 RNG, Taiwan Semiconductor, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 600V 18A TO263
    TSM60NB190CM2 RNG Images
    TSM60NB190CM2 RNG Images
    Product Attributes：
  • Part Number: TSM60NB190CM2 RNG
  • Manufacturer: Taiwan Semiconductor
  • Description: MOSFET N-CH 600V 18A TO263
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • TSM60NB190CM2 RNG Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: TSM60NB190CM2 RNG
  • Mfr: Taiwan Semiconductor Corporation
  • Description: MOSFET N-CH 600V 18A TO263
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: -
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 600 V
  • Current-ContinuousDrain(Id)@25°C: 18A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 10V
  • RdsOn(Max)@IdVgs: 190mOhm @ 6A, 10V
  • Vgs(th)(Max)@Id: 4V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 31 nC @ 10 V
  • Vgs(Max): ±30V
  • InputCapacitance(Ciss)(Max)@Vds: 1273 pF @ 100 V
  • FETFeature: -
  • PowerDissipation(Max): 150.6W (Tc)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: TO-263 (D²Pak)
  • TSM60NB190CM2 RNG | Taiwan Semiconductor | NHE Electronics
    • TSM60NB190CM2 RNG were obtained directly from authorized Taiwan Semiconductor distributors and other trusted sources throughout the world.
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