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TSM80N1R2CL C0G, Taiwan Semiconductor, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 800V 5.5A TO262S
DIODE GEN PURP 600V 8A TO220AB
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MOSFET N-CHANNEL 30V 70A TO252
BRIDGE RECT 1P 200V 25A TS-6P
Product Specifications:
MfrPart.: TSM80N1R2CL C0GMfr: Taiwan Semiconductor CorporationDescription: MOSFET N-CH 800V 5.5A TO262SProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: TubeSeries: -PartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 800 VCurrent-ContinuousDrain(Id)@25°C: 5.5A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 1.2Ohm @ 1.8A, 10VVgs(th)(Max)@Id: 4V @ 250µAGateCharge(Qg)(Max)@Vgs: 19.4 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 685 pF @ 100 VFETFeature: -PowerDissipation(Max): 110W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Through HoleSupplierDevicePackage: TO-262S (I2PAK)TSM80N1R2CL C0G | Taiwan Semiconductor | NHE Electronics
TSM80N1R2CL C0G were obtained directly from authorized Taiwan Semiconductor distributors and other trusted sources throughout the world.