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    CSD25213W10, Texas Instruments, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 1.6A 4DSBGA
    CSD25213W10 Images
    CSD25213W10 Images
    Product Attributes：
  • Part Number: CSD25213W10
  • Manufacturer: Texas Instruments (TI)
  • Description: MOSFET P-CH 20V 1.6A 4DSBGA
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • CSD25213W10 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: CSD25213W10
  • Mfr: Texas Instruments
  • Description: MOSFET P-CH 20V 1.6A 4DSBGA
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: NexFET™
  • PartStatus: Active
  • FETType: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 20 V
  • Current-ContinuousDrain(Id)@25°C: 1.6A (Ta)
  • DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 4.5V
  • RdsOn(Max)@IdVgs: 47mOhm @ 1A, 4.5V
  • Vgs(th)(Max)@Id: 1.1V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 2.9 nC @ 4.5 V
  • Vgs(Max): -6V
  • InputCapacitance(Ciss)(Max)@Vds: 478 pF @ 10 V
  • FETFeature: -
  • PowerDissipation(Max): 1W (Ta)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: 4-DSBGA (1x1)
  • CSD25213W10 | Texas Instruments | NHE Electronics
    • CSD25213W10 were obtained directly from authorized Texas Instruments distributors and other trusted sources throughout the world.
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