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    2SA965-O(TE6,F,M), Toshiba Electronics, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, TRANS PNP 800MA 120V TO226-3
    2SA965-O(TE6,F,M) Images
    2SA965-O(TE6,F,M) Images
    Product Attributes：
  • Part Number: 2SA965-O(TE6,F,M)
  • Manufacturer: Toshiba Electronics
  • Description: TRANS PNP 800MA 120V TO226-3
  • Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single
  • 2SA965-O(TE6,F,M) Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: 2SA965-O(TE6,F,M)
  • Mfr: Toshiba Semiconductor and Storage
  • Description: TRANS PNP 800MA 120V TO226-3
  • Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single
  • Package: Bulk
  • Series: -
  • PartStatus: Obsolete
  • TransistorType: PNP
  • Current-Collector(Ic)(Max): 800 mA
  • Voltage-CollectorEmitterBreakdown(Max): 120 V
  • VceSaturation(Max)@IbIc: 1V @ 50mA, 500mA
  • Current-CollectorCutoff(Max): 100nA (ICBO)
  • DCCurrentGain(hFE)(Min)@IcVce: 80 @ 100mA, 5V
  • Power-Max: 900 mW
  • Frequency-Transition: 120MHz
  • OperatingTemperature: 150°C (TJ)
  • MountingType: Through Hole
  • Package/Case: TO-226-3, TO-92-3 Long Body
  • 2SA965-O(TE6,F,M) | Toshiba Electronics | NHE Electronics
    • 2SA965-O(TE6,F,M) were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.
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