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2SB1457(TE6,F,M), Toshiba Electronics, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, TRANS PNP 2A 100V TO226-3
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Product Specifications:
MfrPart.: 2SB1457(TE6,F,M)Mfr: Toshiba Semiconductor and StorageDescription: TRANS PNP 2A 100V TO226-3Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - SinglePackage: BulkSeries: -PartStatus: ObsoleteTransistorType: PNPCurrent-Collector(Ic)(Max): 2 AVoltage-CollectorEmitterBreakdown(Max): 100 VVceSaturation(Max)@IbIc: 1.5V @ 1mA, 1ACurrent-CollectorCutoff(Max): 10µA (ICBO)DCCurrentGain(hFE)(Min)@IcVce: 2000 @ 1A, 2VPower-Max: 900 mWFrequency-Transition: 50MHzOperatingTemperature: 150°C (TJ)MountingType: Through HolePackage/Case: TO-226-3, TO-92-3 Long Body2SB1457(TE6,F,M) | Toshiba Electronics | NHE Electronics
2SB1457(TE6,F,M) were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.