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2SC2713-GR,LF, Toshiba Electronics, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, TRANS NPN 120V 0.1A S-MINI
IC ISOLATION AMPLIFIER SO8
IC GATE AND 2CH 4-INP US8
TRANS 2PNP PREBIAS 0.1W ES6
MOSFET P-CH 20V 3.9A SOT23F
Product Specifications:
MfrPart.: 2SC2713-GR,LFMfr: Toshiba Semiconductor and StorageDescription: TRANS NPN 120V 0.1A S-MINIProduct Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: -PartStatus: ActiveTransistorType: NPNCurrent-Collector(Ic)(Max): 100 mAVoltage-CollectorEmitterBreakdown(Max): 120 VVceSaturation(Max)@IbIc: 300mV @ 1mA, 10mACurrent-CollectorCutoff(Max): 100nA (ICBO)DCCurrentGain(hFE)(Min)@IcVce: 200 @ 2mA, 6VPower-Max: 150 mWFrequency-Transition: 100MHzOperatingTemperature: 125°C (TJ)MountingType: Surface MountPackage/Case: TO-236-3, SC-59, SOT-23-32SC2713-GR,LF | Toshiba Electronics | NHE Electronics
2SC2713-GR,LF were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.