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2SC6076(TE16L1,NV), Toshiba Electronics, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, TRANS NPN 80V 3A PW MOLD
2SC6076(TE16L1,NV) Images
MOSFET N-CH 600V 30.8A TO247
IC ISOLATION AMPLIFIER SO8
Product Specifications:
MfrPart.: 2SC6076(TE16L1,NV)Mfr: Toshiba Semiconductor and StorageDescription: TRANS NPN 80V 3A PW MOLDProduct Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: -PartStatus: ActiveTransistorType: NPNCurrent-Collector(Ic)(Max): 3 AVoltage-CollectorEmitterBreakdown(Max): 80 VVceSaturation(Max)@IbIc: 500mV @ 100mA, 1ACurrent-CollectorCutoff(Max): 1µA (ICBO)DCCurrentGain(hFE)(Min)@IcVce: 180 @ 500mA, 2VPower-Max: 10 WFrequency-Transition: 150MHzOperatingTemperature: 150°C (TJ)MountingType: Surface MountPackage/Case: TO-252-3, DPak (2 Leads + Tab), SC-632SC6076(TE16L1,NV) | Toshiba Electronics | NHE Electronics
2SC6076(TE16L1,NV) were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.