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    2SK1119(F), Toshiba Electronics, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 1000V 4A TO220AB
    2SK1119(F) Images
    2SK1119(F) Images
    Product Attributes：
  • Part Number: 2SK1119(F)
  • Manufacturer: Toshiba Electronics
  • Description: MOSFET N-CH 1000V 4A TO220AB
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • 2SK1119(F) Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: 2SK1119(F)
  • Mfr: Toshiba Semiconductor and Storage
  • Description: MOSFET N-CH 1000V 4A TO220AB
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tube
  • Series: -
  • PartStatus: Obsolete
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 1000 V
  • Current-ContinuousDrain(Id)@25°C: 4A (Ta)
  • DriveVoltage(MaxRdsOnMinRdsOn): 10V
  • RdsOn(Max)@IdVgs: 3.8Ohm @ 2A, 10V
  • Vgs(th)(Max)@Id: 3.5V @ 1mA
  • GateCharge(Qg)(Max)@Vgs: 60 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 700 pF @ 25 V
  • FETFeature: -
  • PowerDissipation(Max): 100W (Tc)
  • OperatingTemperature: 150°C (TJ)
  • MountingType: Through Hole
  • SupplierDevicePackage: TO-220AB
  • 2SK1119(F) | Toshiba Electronics | NHE Electronics
    • 2SK1119(F) were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.
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