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2SK2719(F), Toshiba Electronics, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 900V 3A TO3P
Product Attributes:
Part Number: 2SK2719(F)
Manufacturer: Toshiba Electronics
Description: MOSFET N-CH 900V 3A TO3P
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
2SK2719(F) Datasheet (PDF)
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MOSFET N-CH 650V 8A TO220SIS
TRANS PREBIAS NPN 50V 0.1A USM
IC BUFFER NON-INVERT 5.5V USV
DIODE SCHOTTKY 30V 2A M-FLAT
NPN + PNP BRT Q1BSR47KOHM Q1BER2
IC REG LINEAR 5V 150MA LSTM
Product Specifications:
MfrPart.: 2SK2719(F)Mfr: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 900V 3A TO3PProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: TubeSeries: -PartStatus: ObsoleteFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 900 VCurrent-ContinuousDrain(Id)@25°C: 3A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 4.3Ohm @ 1.5A, 10VVgs(th)(Max)@Id: 4V @ 1mAGateCharge(Qg)(Max)@Vgs: 25 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 750 pF @ 25 VFETFeature: -PowerDissipation(Max): 125W (Tc)OperatingTemperature: 150°C (TJ)MountingType: Through HoleSupplierDevicePackage: TO-3P(N)2SK2719(F) | Toshiba Electronics | NHE Electronics
2SK2719(F) were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.