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BAS316,H3F, Toshiba Electronics, Discrete Semiconductor Products~Diodes - Rectifiers - Single, DIODE GEN PURP 100V 250MA USC
Product Attributes:
Part Number: BAS316,H3F
Manufacturer: Toshiba Electronics
Description: DIODE GEN PURP 100V 250MA USC
Category: Discrete Semiconductor Products~Diodes - Rectifiers - Single
BAS316,H3F Datasheet (PDF)
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RF TRANS NPN 12V 7GHZ SSM
MOSFET P-CH 20V 700MA CST3C
PB-F DIODE TO-220-2L V=650 IF=4A
TRANS NPN/PNP PREBIAS 0.3W SM6
DIODE ZENER 10V 700MW SFLAT
Product Specifications:
Manufacturer Product Number: BAS316,H3FMfr: Toshiba Semiconductor and StorageDetailed Description: DIODE GEN PURP 100V 250MA USCProduct Category: Discrete Semiconductor Products~Diodes - Rectifiers - SinglePackage: Tape & Reel (TR)Series: -Part Status: ActiveDiode Type: StandardVoltage - DC Reverse (Vr) (Max): 100 VCurrent - Average Rectified (Io): 250mAVoltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mASpeed: Fast Recovery =< 500ns, > 200mA (Io)Reverse Recovery Time (trr): 3 nsCurrent - Reverse Leakage @ Vr: 200 nA @ 80 VCapacitance @ Vr, F: 0.35pF @ 0V, 1MHzMounting Type: Surface MountPackage / Case: SC-76, SOD-323Operating Temperature - Junction: 150°C (Max)BAS316,H3F | Toshiba Electronics | NHE Electronics
BAS316,H3F were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.