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    GT10J312(Q), Toshiba Electronics, Discrete Semiconductor Products~Transistors - IGBTs - Single, IGBT 600V 10A 60W TO220SM
    GT10J312(Q) Images
    GT10J312(Q) Images
    Product Attributes：
  • Part Number: GT10J312(Q)
  • Manufacturer: Toshiba Electronics
  • Description: IGBT 600V 10A 60W TO220SM
  • Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • GT10J312(Q) Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: GT10J312(Q)
  • Mfr: Toshiba Semiconductor and Storage
  • Description: IGBT 600V 10A 60W TO220SM
  • Product Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
  • Package: Tube
  • Series: -
  • PartStatus: Obsolete
  • IGBTType: -
  • Voltage-CollectorEmitterBreakdown(Max): 600 V
  • Current-Collector(Ic)(Max): 10 A
  • Current-CollectorPulsed(Icm): 20 A
  • Vce(on)(Max)@VgeIc: 2.7V @ 15V, 10A
  • Power-Max: 60 W
  • SwitchingEnergy: -
  • InputType: Standard
  • GateCharge: -
  • Td(on/off)@25°C: 400ns/400ns
  • TestCondition: 300V, 10A, 100Ohm, 15V
  • ReverseRecoveryTime(trr): 200 ns
  • OperatingTemperature: 150°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • GT10J312(Q) | Toshiba Electronics | NHE Electronics
    • GT10J312(Q) were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.
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