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GT30J121(Q), Toshiba Electronics, Discrete Semiconductor Products~Transistors - IGBTs - Single, IGBT 600V 30A 170W TO3PN
Product Attributes:
Part Number: GT30J121(Q)
Manufacturer: Toshiba Electronics
Description: IGBT 600V 30A 170W TO3PN
Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
GT30J121(Q) Datasheet (PDF)
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Product Specifications:
MfrPart.: GT30J121(Q)Mfr: Toshiba Semiconductor and StorageDescription: IGBT 600V 30A 170W TO3PNProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - SinglePackage: TubeSeries: *PartStatus: ActiveIGBTType: -Voltage-CollectorEmitterBreakdown(Max): 600 VCurrent-Collector(Ic)(Max): 30 ACurrent-CollectorPulsed(Icm): 60 AVce(on)(Max)@VgeIc: 2.45V @ 15V, 30APower-Max: 170 WSwitchingEnergy: 1mJ (on), 800µJ (off)InputType: StandardGateCharge: -Td(on/off)@25°C: 90ns/300nsTestCondition: 300V, 30A, 24Ohm, 15VReverseRecoveryTime(trr): -OperatingTemperature: -MountingType: Through HolePackage/Case: TO-3P-3, SC-65-3GT30J121(Q) | Toshiba Electronics | NHE Electronics
GT30J121(Q) were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.