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GT60N321(Q), Toshiba Electronics, Discrete Semiconductor Products~Transistors - IGBTs - Single, IGBT 1000V 60A 170W TO3P LH
Product Attributes:
Part Number: GT60N321(Q)
Manufacturer: Toshiba Electronics
Description: IGBT 1000V 60A 170W TO3P LH
Category: Discrete Semiconductor Products~Transistors - IGBTs - Single
GT60N321(Q) Datasheet (PDF)
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DIODE SCHOTTKY 40V 1.5A S-FLAT
TRANS PREBIAS PNP 50V 0.1A SSM
IC BUFFER NON-INVERT 5.5V SM8
X34 PB-F 8-BIT SHIFT REGISTER (P
IC BUS SWITCH 2 X 1:1 US8
Product Specifications:
MfrPart.: GT60N321(Q)Mfr: Toshiba Semiconductor and StorageDescription: IGBT 1000V 60A 170W TO3P LHProduct Category: Discrete Semiconductor Products~Transistors - IGBTs - SinglePackage: TubeSeries: -PartStatus: ObsoleteIGBTType: -Voltage-CollectorEmitterBreakdown(Max): 1000 VCurrent-Collector(Ic)(Max): 60 ACurrent-CollectorPulsed(Icm): 120 AVce(on)(Max)@VgeIc: 2.8V @ 15V, 60APower-Max: 170 WSwitchingEnergy: -InputType: StandardGateCharge: -Td(on/off)@25°C: 330ns/700nsTestCondition: -ReverseRecoveryTime(trr): 2.5 µsOperatingTemperature: 150°C (TJ)MountingType: Through HolePackage/Case: TO-3PLGT60N321(Q) | Toshiba Electronics | NHE Electronics
GT60N321(Q) were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.