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    HN3C10FUTE85LF, Toshiba Electronics, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF, RF TRANS 2 NPN 12V 7GHZ US6
    HN3C10FUTE85LF Images
    HN3C10FUTE85LF Images
    Product Attributes：
  • Part Number: HN3C10FUTE85LF
  • Manufacturer: Toshiba Electronics
  • Description: RF TRANS 2 NPN 12V 7GHZ US6
  • Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
  • HN3C10FUTE85LF Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: HN3C10FUTE85LF
  • Mfr: Toshiba Semiconductor and Storage
  • Description: RF TRANS 2 NPN 12V 7GHZ US6
  • Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: -
  • PartStatus: Active
  • TransistorType: 2 NPN (Dual)
  • Voltage-CollectorEmitterBreakdown(Max): 12V
  • Frequency-Transition: 7GHz
  • NoiseFigure(dBTyp@f): 1.1dB @ 1GHz
  • Gain: 11.5dB
  • Power-Max: 200mW
  • DCCurrentGain(hFE)(Min)@IcVce: 80 @ 20mA, 10V
  • Current-Collector(Ic)(Max): 80mA
  • OperatingTemperature: -
  • MountingType: Surface Mount
  • Package/Case: 6-TSSOP, SC-88, SOT-363
  • HN3C10FUTE85LF | Toshiba Electronics | NHE Electronics
    • HN3C10FUTE85LF were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.
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