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    HN3C51F-GR(TE85L,F, Toshiba Electronics, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays, TRANS 2NPN 120V 0.1A SM6
    HN3C51F-GR(TE85L,F Images
    HN3C51F-GR(TE85L,F Images
    Product Attributes：
  • Part Number: HN3C51F-GR(TE85L,F
  • Manufacturer: Toshiba Electronics
  • Description: TRANS 2NPN 120V 0.1A SM6
  • Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays
  • HN3C51F-GR(TE85L,F Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: HN3C51F-GR(TE85L,F
  • Mfr: Toshiba Semiconductor and Storage
  • Description: TRANS 2NPN 120V 0.1A SM6
  • Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: -
  • PartStatus: Obsolete
  • TransistorType: 2 NPN (Dual)
  • Current-Collector(Ic)(Max): 100mA
  • Voltage-CollectorEmitterBreakdown(Max): 120V
  • VceSaturation(Max)@IbIc: 300mV @ 1mA, 10mA
  • Current-CollectorCutoff(Max): 100nA (ICBO)
  • DCCurrentGain(hFE)(Min)@IcVce: 200 @ 2mA, 6V
  • Power-Max: 300mW
  • Frequency-Transition: 100MHz
  • OperatingTemperature: 150°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: SC-74, SOT-457
  • HN3C51F-GR(TE85L,F | Toshiba Electronics | NHE Electronics
    • HN3C51F-GR(TE85L,F were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.
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