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    MT3S111P(TE12L,F), Toshiba Electronics, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF, RF TRANS NPN 6V 8GHZ PW-MINI
    MT3S111P(TE12L,F) Images
    MT3S111P(TE12L,F) Images
    Product Attributes：
  • Part Number: MT3S111P(TE12L,F)
  • Manufacturer: Toshiba Electronics
  • Description: RF TRANS NPN 6V 8GHZ PW-MINI
  • Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
  • MT3S111P(TE12L,F) Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: MT3S111P(TE12L,F)
  • Mfr: Toshiba Semiconductor and Storage
  • Description: RF TRANS NPN 6V 8GHZ PW-MINI
  • Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: -
  • PartStatus: Active
  • TransistorType: NPN
  • Voltage-CollectorEmitterBreakdown(Max): 6V
  • Frequency-Transition: 8GHz
  • NoiseFigure(dBTyp@f): 1.25dB @ 1GHz
  • Gain: 10.5dB
  • Power-Max: 1W
  • DCCurrentGain(hFE)(Min)@IcVce: 200 @ 30mA, 5V
  • Current-Collector(Ic)(Max): 100mA
  • OperatingTemperature: 150°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: TO-243AA
  • MT3S111P(TE12L,F) | Toshiba Electronics | NHE Electronics
    • MT3S111P(TE12L,F) were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.
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