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    MT3S111TU,LF, Toshiba Electronics, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF, RF SIGE NPN BIPOLAR TRANSISTOR N
    MT3S111TU,LF Images
    MT3S111TU,LF Images
    Product Attributes：
  • Part Number: MT3S111TU,LF
  • Manufacturer: Toshiba Electronics
  • Description: RF SIGE NPN BIPOLAR TRANSISTOR N
  • Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
  • MT3S111TU,LF Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: MT3S111TU,LF
  • Mfr: Toshiba Semiconductor and Storage
  • Description: RF SIGE NPN BIPOLAR TRANSISTOR N
  • Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - RF
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: -
  • PartStatus: Active
  • TransistorType: NPN
  • Voltage-CollectorEmitterBreakdown(Max): 6V
  • Frequency-Transition: 10GHz
  • NoiseFigure(dBTyp@f): 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
  • Gain: 12.5dB
  • Power-Max: 800mW
  • DCCurrentGain(hFE)(Min)@IcVce: 200 @ 30mA, 5V
  • Current-Collector(Ic)(Max): 100mA
  • OperatingTemperature: 150°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: 3-SMD, Flat Lead
  • MT3S111TU,LF | Toshiba Electronics | NHE Electronics
    • MT3S111TU,LF were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.
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