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    RN1110MFV,L3F, Toshiba Electronics, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased, TRANS PREBIAS NPN 50V 0.1A VESM
    RN1110MFV,L3F Images
    RN1110MFV,L3F Images
    Product Attributes：
  • Part Number: RN1110MFV,L3F
  • Manufacturer: Toshiba Electronics
  • Description: TRANS PREBIAS NPN 50V 0.1A VESM
  • Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased
  • RN1110MFV,L3F Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: RN1110MFV,L3F
  • Mfr: Toshiba Semiconductor and Storage
  • Description: TRANS PREBIAS NPN 50V 0.1A VESM
  • Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: -
  • PartStatus: Active
  • TransistorType: NPN - Pre-Biased
  • Current-Collector(Ic)(Max): 100 mA
  • Voltage-CollectorEmitterBreakdown(Max): 50 V
  • Resistor-Base(R1): 4.7 kOhms
  • Resistor-EmitterBase(R2): -
  • DCCurrentGain(hFE)(Min)@IcVce: 120 @ 1mA, 5V
  • VceSaturation(Max)@IbIc: 300mV @ 500µA, 5mA
  • Current-CollectorCutoff(Max): 100nA (ICBO)
  • Frequency-Transition: -
  • Power-Max: 150 mW
  • MountingType: Surface Mount
  • Package/Case: SOT-723
  • RN1110MFV,L3F | Toshiba Electronics | NHE Electronics
    • RN1110MFV,L3F were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.
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