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RN1112MFV,L3F, Toshiba Electronics, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased, TRANS PREBIAS NPN 50V 0.1A VESM
Product Attributes：
Part Number: RN1112MFV,L3F
Manufacturer: Toshiba Electronics
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased
RN1112MFV,L3F Datasheet (PDF)
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DIODE SCHOTTKY 40V 3A S-FLAT
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TRANS PREBIAS NPN 50V 0.1A SMINI
Product Specifications：
MfrPart.: RN1112MFV,L3FMfr: Toshiba Semiconductor and StorageDescription: TRANS PREBIAS NPN 50V 0.1A VESMProduct Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-BiasedPackage: Tape & Reel (TR),Cut Tape (CT)Series: -PartStatus: ActiveTransistorType: NPN - Pre-BiasedCurrent-Collector(Ic)(Max): 100 mAVoltage-CollectorEmitterBreakdown(Max): 50 VResistor-Base(R1): 22 kOhmsResistor-EmitterBase(R2): -DCCurrentGain(hFE)(Min)@IcVce: 120 @ 1mA, 5VVceSaturation(Max)@IbIc: 300mV @ 500µA, 5mACurrent-CollectorCutoff(Max): 100nA (ICBO)Frequency-Transition: -Power-Max: 150 mWMountingType: Surface MountPackage/Case: SOT-723RN1112MFV,L3F | Toshiba Electronics | NHE Electronics
RN1112MFV,L3F were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.
