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RN1117MFV,L3F, Toshiba Electronics, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased, TRANS PREBIAS NPN 50V 0.1A VESM
Product Attributes：
Part Number: RN1117MFV,L3F
Manufacturer: Toshiba Electronics
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-Biased
RN1117MFV,L3F Datasheet (PDF)
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MOSFET N-CH 30V 100MA SSM
TRANS PREBIAS NPN 50V 0.1A VESM
IC BILATERAL SW 1 X 1:1 14SOP
Product Specifications：
MfrPart.: RN1117MFV,L3FMfr: Toshiba Semiconductor and StorageDescription: TRANS PREBIAS NPN 50V 0.1A VESMProduct Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Single, Pre-BiasedPackage: Tape & Reel (TR)Series: -PartStatus: ActiveTransistorType: NPN - Pre-BiasedCurrent-Collector(Ic)(Max): 100 mAVoltage-CollectorEmitterBreakdown(Max): 50 VResistor-Base(R1): 10 kOhmsResistor-EmitterBase(R2): 4.7 kOhmsDCCurrentGain(hFE)(Min)@IcVce: 30 @ 10mA, 5VVceSaturation(Max)@IbIc: 300mV @ 500µA, 5mACurrent-CollectorCutoff(Max): 500nAFrequency-Transition: 250 MHzPower-Max: 150 mWMountingType: Surface MountPackage/Case: SOT-723RN1117MFV,L3F | Toshiba Electronics | NHE Electronics
RN1117MFV,L3F were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.
