Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
RN1707JE(TE85L,F), Toshiba Electronics, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays, Pre-Biased, NPN X 2 BRT, Q1BSR=10KΩ, Q1BER=4
IC GATE NOR 1CH 2-INP USV
TRANS PREBIAS PNP 50V 0.1A SSM
OPTOISO 2.5KV 1CH GATE DRVR 8DIP
MOSFET N-CH 450V 4.5A TO220SIS
IC REG LINEAR 1.8V 300MA 4WCSPE
Product Specifications:
MfrPart.: RN1707JE(TE85L,F)Mfr: Toshiba Semiconductor and StorageDescription: NPN X 2 BRT, Q1BSR=10KΩ, Q1BER=4Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays, Pre-BiasedPackage: Tape & Reel (TR),Cut Tape (CT)Series: -PartStatus: ActiveTransistorType: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)Current-Collector(Ic)(Max): 100mAVoltage-CollectorEmitterBreakdown(Max): 50VResistor-Base(R1): 10kOhmsResistor-EmitterBase(R2): 47kOhmsDCCurrentGain(hFE)(Min)@IcVce: 80 @ 10mA, 5VVceSaturation(Max)@IbIc: 300mV @ 250µA, 5mACurrent-CollectorCutoff(Max): 500nAFrequency-Transition: 250MHzPower-Max: 100mWMountingType: Surface MountPackage/Case: SOT-553RN1707JE(TE85L,F) | Toshiba Electronics | NHE Electronics
RN1707JE(TE85L,F) were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.