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    RN1708JE(TE85L,F), Toshiba Electronics, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays, Pre-Biased, NPN X 2 BRT, Q1BSR=22KΩ, Q1BER=4
    RN1708JE(TE85L,F) Images
    RN1708JE(TE85L,F) Images
    Product Attributes：
  • Part Number: RN1708JE(TE85L,F)
  • Manufacturer: Toshiba Electronics
  • Description: NPN X 2 BRT, Q1BSR=22KΩ, Q1BER=4
  • Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • RN1708JE(TE85L,F) Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: RN1708JE(TE85L,F)
  • Mfr: Toshiba Semiconductor and Storage
  • Description: NPN X 2 BRT, Q1BSR=22KΩ, Q1BER=4
  • Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays, Pre-Biased
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: -
  • PartStatus: Active
  • TransistorType: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
  • Current-Collector(Ic)(Max): 100mA
  • Voltage-CollectorEmitterBreakdown(Max): 50V
  • Resistor-Base(R1): 22kOhms
  • Resistor-EmitterBase(R2): 47kOhms
  • DCCurrentGain(hFE)(Min)@IcVce: 80 @ 10mA, 5V
  • VceSaturation(Max)@IbIc: 300mV @ 250µA, 5mA
  • Current-CollectorCutoff(Max): 500nA
  • Frequency-Transition: 250MHz
  • Power-Max: 100mW
  • MountingType: Surface Mount
  • Package/Case: SOT-553
  • RN1708JE(TE85L,F) | Toshiba Electronics | NHE Electronics
    • RN1708JE(TE85L,F) were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.
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