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RN1709JE(TE85L,F), Toshiba Electronics, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays, Pre-Biased, NPN X 2 BRT, Q1BSR=47KΩ, Q1BER=2
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Product Specifications:
MfrPart.: RN1709JE(TE85L,F)Mfr: Toshiba Semiconductor and StorageDescription: NPN X 2 BRT, Q1BSR=47KΩ, Q1BER=2Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays, Pre-BiasedPackage: Tape & Reel (TR),Cut Tape (CT)Series: -PartStatus: ActiveTransistorType: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)Current-Collector(Ic)(Max): 100mAVoltage-CollectorEmitterBreakdown(Max): 50VResistor-Base(R1): 47kOhmsResistor-EmitterBase(R2): 22kOhmsDCCurrentGain(hFE)(Min)@IcVce: 70 @ 10mA, 5VVceSaturation(Max)@IbIc: 300mV @ 250µA, 5mACurrent-CollectorCutoff(Max): 500nAFrequency-Transition: 250MHzPower-Max: 100mWMountingType: Surface MountPackage/Case: SOT-553RN1709JE(TE85L,F) | Toshiba Electronics | NHE Electronics
RN1709JE(TE85L,F) were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.