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RN1905FE,LF(CT, Toshiba Electronics, Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays, Pre-Biased, TRANS 2NPN PREBIAS 0.1W ES6
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Product Specifications:
MfrPart.: RN1905FE,LF(CTMfr: Toshiba Semiconductor and StorageDescription: TRANS 2NPN PREBIAS 0.1W ES6Product Category: Discrete Semiconductor Products~Transistors - Bipolar (BJT) - Arrays, Pre-BiasedPackage: Tape & Reel (TR),Cut Tape (CT)Series: -PartStatus: ActiveTransistorType: 2 NPN - Pre-Biased (Dual)Current-Collector(Ic)(Max): 100mAVoltage-CollectorEmitterBreakdown(Max): 50VResistor-Base(R1): 2.2kOhmsResistor-EmitterBase(R2): 47kOhmsDCCurrentGain(hFE)(Min)@IcVce: 80 @ 10mA, 5VVceSaturation(Max)@IbIc: 300mV @ 250µA, 5mACurrent-CollectorCutoff(Max): 500nAFrequency-Transition: 250MHzPower-Max: 100mWMountingType: Surface MountPackage/Case: SOT-563, SOT-666RN1905FE,LF(CT | Toshiba Electronics | NHE Electronics
RN1905FE,LF(CT were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.