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TJ80S04M3L(T6L1,NQ, Toshiba Electronics, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 40V 80A DPAK
TJ80S04M3L(T6L1,NQ Images
TRANS 2PNP PREBIAS 0.1W ESV
DIODE ARRAY GP 80V 100MA USM
Product Specifications:
MfrPart.: TJ80S04M3L(T6L1,NQMfr: Toshiba Semiconductor and StorageDescription: MOSFET P-CH 40V 80A DPAKProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: U-MOSVIPartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 40 VCurrent-ContinuousDrain(Id)@25°C: 80A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10VRdsOn(Max)@IdVgs: 5.2mOhm @ 40A, 10VVgs(th)(Max)@Id: 3V @ 1mAGateCharge(Qg)(Max)@Vgs: 158 nC @ 10 VVgs(Max): +10V, -20VInputCapacitance(Ciss)(Max)@Vds: 7770 pF @ 10 VFETFeature: -PowerDissipation(Max): 100W (Tc)OperatingTemperature: 175°C (TJ)MountingType: Surface MountSupplierDevicePackage: DPAK+TJ80S04M3L(T6L1,NQ | Toshiba Electronics | NHE Electronics
TJ80S04M3L(T6L1,NQ were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.