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TJ8S06M3L(T6L1,NQ), Toshiba Electronics, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 60V 8A DPAK
TJ8S06M3L(T6L1,NQ) Images
TJ8S06M3L(T6L1,NQ) Images
Product Attributes:
  • Part Number: TJ8S06M3L(T6L1,NQ)
  • Manufacturer: Toshiba Electronics
  • Description: MOSFET P-CH 60V 8A DPAK
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • TJ8S06M3L(T6L1,NQ) Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications:
  • MfrPart.: TJ8S06M3L(T6L1,NQ)
  • Mfr: Toshiba Semiconductor and Storage
  • Description: MOSFET P-CH 60V 8A DPAK
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR)
  • Series: U-MOSVI
  • PartStatus: Active
  • FETType: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 60 V
  • Current-ContinuousDrain(Id)@25°C: 8A (Ta)
  • DriveVoltage(MaxRdsOnMinRdsOn): 6V, 10V
  • RdsOn(Max)@IdVgs: 104mOhm @ 4A, 10V
  • Vgs(th)(Max)@Id: 3V @ 1mA
  • GateCharge(Qg)(Max)@Vgs: 19 nC @ 10 V
  • Vgs(Max): +10V, -20V
  • InputCapacitance(Ciss)(Max)@Vds: 890 pF @ 10 V
  • FETFeature: -
  • PowerDissipation(Max): 27W (Tc)
  • OperatingTemperature: 175°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: DPAK+
  • TJ8S06M3L(T6L1,NQ) | Toshiba Electronics | NHE Electronics
  • TJ8S06M3L(T6L1,NQ) were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.
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