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TK10J80E,S1E, Toshiba Electronics, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 800V 10A TO3P
Product Attributes:
Part Number: TK10J80E,S1E
Manufacturer: Toshiba Electronics
Description: MOSFET N-CH 800V 10A TO3P
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
TK10J80E,S1E Datasheet (PDF)
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MOSFET N-CH 650V 9.3A TO220SIS
IC BUF NON-INVERT 3.6V 20TSSOP
SENSOR OPT 640NM AMBIENT 1210
Product Specifications:
MfrPart.: TK10J80E,S1EMfr: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 800V 10A TO3PProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: TubeSeries: π-MOSVIIIPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 800 VCurrent-ContinuousDrain(Id)@25°C: 10A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 1Ohm @ 5A, 10VVgs(th)(Max)@Id: 4V @ 1mAGateCharge(Qg)(Max)@Vgs: 46 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 2000 pF @ 25 VFETFeature: -PowerDissipation(Max): 250W (Tc)OperatingTemperature: 150°C (TJ)MountingType: Through HoleSupplierDevicePackage: TO-3P(N)TK10J80E,S1E | Toshiba Electronics | NHE Electronics
TK10J80E,S1E were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.