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TK12E60W,S1VX, Toshiba Electronics, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N CH 600V 11.5A TO-220
TRANS NPN/PNP PREBIAS 0.2W US6
TRANS NPN/PNP PREBIAS 0.1W ES6
TRANS NPN/PNP 50V 0.15A US6
IC REG LINEAR 2.8V 420MA 4WCSPE
DIODE SCHOTTKY 30V 1A USFLAT
Product Specifications:
MfrPart.: TK12E60W,S1VXMfr: Toshiba Semiconductor and StorageDescription: MOSFET N CH 600V 11.5A TO-220Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: TubeSeries: DTMOSIVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 600 VCurrent-ContinuousDrain(Id)@25°C: 11.5A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 300mOhm @ 5.8A, 10VVgs(th)(Max)@Id: 3.7V @ 600µAGateCharge(Qg)(Max)@Vgs: 25 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 890 pF @ 300 VFETFeature: Super JunctionPowerDissipation(Max): 110W (Tc)OperatingTemperature: 150°C (TJ)MountingType: Through HoleSupplierDevicePackage: TO-220TK12E60W,S1VX | Toshiba Electronics | NHE Electronics
TK12E60W,S1VX were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.