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TK39A60W,S4VX, Toshiba Electronics, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 600V 38.8A TO220SIS
TRANS 2NPN PREBIAS 0.5W US6
DIODE SCHOTTKY 30V 100MA SC2
SMOS P-CH VDSS=-20V, VGSS=+6/-8V
Product Specifications:
MfrPart.: TK39A60W,S4VXMfr: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 600V 38.8A TO220SISProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: TubeSeries: DTMOSIVPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 600 VCurrent-ContinuousDrain(Id)@25°C: 38.8A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 65mOhm @ 19.4A, 10VVgs(th)(Max)@Id: 3.7V @ 1.9mAGateCharge(Qg)(Max)@Vgs: 110 nC @ 10 VVgs(Max): ±30VInputCapacitance(Ciss)(Max)@Vds: 4100 pF @ 300 VFETFeature: -PowerDissipation(Max): 50W (Tc)OperatingTemperature: 150°C (TJ)MountingType: Through HoleSupplierDevicePackage: TO-220SISTK39A60W,S4VX | Toshiba Electronics | NHE Electronics
TK39A60W,S4VX were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.