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    TK39J60W,S1VQ, Toshiba Electronics, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 600V 38.8A TO3P
    TK39J60W,S1VQ Images
    TK39J60W,S1VQ Images
    Product Attributes：
  • Part Number: TK39J60W,S1VQ
  • Manufacturer: Toshiba Electronics
  • Description: MOSFET N-CH 600V 38.8A TO3P
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • TK39J60W,S1VQ Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: TK39J60W,S1VQ
  • Mfr: Toshiba Semiconductor and Storage
  • Description: MOSFET N-CH 600V 38.8A TO3P
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tube
  • Series: DTMOSIV
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 600 V
  • Current-ContinuousDrain(Id)@25°C: 38.8A (Ta)
  • DriveVoltage(MaxRdsOnMinRdsOn): 10V
  • RdsOn(Max)@IdVgs: 65mOhm @ 19.4A, 10V
  • Vgs(th)(Max)@Id: 3.7V @ 1.9mA
  • GateCharge(Qg)(Max)@Vgs: 110 nC @ 10 V
  • Vgs(Max): ±30V
  • InputCapacitance(Ciss)(Max)@Vds: 4100 pF @ 300 V
  • FETFeature: Super Junction
  • PowerDissipation(Max): 270W (Tc)
  • OperatingTemperature: 150°C (TJ)
  • MountingType: Through Hole
  • SupplierDevicePackage: TO-3P(N)
  • TK39J60W,S1VQ | Toshiba Electronics | NHE Electronics
    • TK39J60W,S1VQ were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.
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