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    TPN1110ENH,L1Q, Toshiba Electronics, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 200V 7.2A 8TSON
    TPN1110ENH,L1Q Images
    TPN1110ENH,L1Q Images
    Product Attributes：
  • Part Number: TPN1110ENH,L1Q
  • Manufacturer: Toshiba Electronics
  • Description: MOSFET N-CH 200V 7.2A 8TSON
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • TPN1110ENH,L1Q Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: TPN1110ENH,L1Q
  • Mfr: Toshiba Semiconductor and Storage
  • Description: MOSFET N-CH 200V 7.2A 8TSON
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: U-MOSVIII-H
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 200 V
  • Current-ContinuousDrain(Id)@25°C: 7.2A (Ta)
  • DriveVoltage(MaxRdsOnMinRdsOn): 10V
  • RdsOn(Max)@IdVgs: 114mOhm @ 3.6A, 10V
  • Vgs(th)(Max)@Id: 4V @ 200µA
  • GateCharge(Qg)(Max)@Vgs: 7 nC @ 10 V
  • Vgs(Max): ±20V
  • InputCapacitance(Ciss)(Max)@Vds: 600 pF @ 100 V
  • FETFeature: -
  • PowerDissipation(Max): 700mW (Ta), 39W (Tc)
  • OperatingTemperature: 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: 8-TSON Advance (3.1x3.1)
  • TPN1110ENH,L1Q | Toshiba Electronics | NHE Electronics
    • TPN1110ENH,L1Q were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.
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