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TPN2010FNH,L1Q, Toshiba Electronics, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET N-CH 250V 5.6A 8TSON
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Product Specifications：
MfrPart.: TPN2010FNH,L1QMfr: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 250V 5.6A 8TSONProduct Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: U-MOSVIII-HPartStatus: ActiveFETType: N-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 250 VCurrent-ContinuousDrain(Id)@25°C: 5.6A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 198mOhm @ 2.8A, 10VVgs(th)(Max)@Id: 4V @ 200µAGateCharge(Qg)(Max)@Vgs: 7 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 600 pF @ 100 VFETFeature: -PowerDissipation(Max): 700mW (Ta), 39W (Tc)OperatingTemperature: 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: 8-TSON Advance (3.1x3.1)TPN2010FNH,L1Q | Toshiba Electronics | NHE Electronics
TPN2010FNH,L1Q were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.
