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    TPN4R712MD,L1Q, Toshiba Electronics, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 36A 8TSON
    TPN4R712MD,L1Q Images
    TPN4R712MD,L1Q Images
    Product Attributes：
  • Part Number: TPN4R712MD,L1Q
  • Manufacturer: Toshiba Electronics
  • Description: MOSFET P-CH 20V 36A 8TSON
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • TPN4R712MD,L1Q Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: TPN4R712MD,L1Q
  • Mfr: Toshiba Semiconductor and Storage
  • Description: MOSFET P-CH 20V 36A 8TSON
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: U-MOSVI
  • PartStatus: Active
  • FETType: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 20 V
  • Current-ContinuousDrain(Id)@25°C: 36A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 2.5V, 4.5V
  • RdsOn(Max)@IdVgs: 4.7mOhm @ 18A, 4.5V
  • Vgs(th)(Max)@Id: 1.2V @ 1mA
  • GateCharge(Qg)(Max)@Vgs: 65 nC @ 5 V
  • Vgs(Max): ±12V
  • InputCapacitance(Ciss)(Max)@Vds: 4300 pF @ 10 V
  • FETFeature: -
  • PowerDissipation(Max): 42W (Tc)
  • OperatingTemperature: 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: 8-TSON Advance (3.1x3.1)
  • TPN4R712MD,L1Q | Toshiba Electronics | NHE Electronics
    • TPN4R712MD,L1Q were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.
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