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TRS10E65C,S1Q, Toshiba Electronics, Discrete Semiconductor Products~Diodes - Rectifiers - Single, DIODE SCHOTTKY 650V 10A TO220-2L
SMOS NCH I: 0.4A, V: 60V, P: 270
IC BUFFER NON-INVERT 3.6V FSV
X35 PB-F POWER MOSFET TRANSISTOR
TRANS NPN 120V 0.1A S-MINI
Product Specifications:
Manufacturer Product Number: TRS10E65C,S1QMfr: Toshiba Semiconductor and StorageDetailed Description: DIODE SCHOTTKY 650V 10A TO220-2LProduct Category: Discrete Semiconductor Products~Diodes - Rectifiers - SinglePackage: TubeSeries: -Part Status: ObsoleteDiode Type: Silicon Carbide SchottkyVoltage - DC Reverse (Vr) (Max): 650 VCurrent - Average Rectified (Io): 10A (DC)Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 ASpeed: No Recovery Time > 500mA (Io)Reverse Recovery Time (trr): 0 nsCurrent - Reverse Leakage @ Vr: 90 µA @ 650 VCapacitance @ Vr, F: -Mounting Type: Through HolePackage / Case: TO-220-2Operating Temperature - Junction: 175°C (Max)TRS10E65C,S1Q | Toshiba Electronics | NHE Electronics
TRS10E65C,S1Q were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.