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    TW070J120B,S1Q, Toshiba Electronics, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, SICFET N-CH 1200V 36A TO3P
    TW070J120B,S1Q Images
    TW070J120B,S1Q Images
    Product Attributes：
  • Part Number: TW070J120B,S1Q
  • Manufacturer: Toshiba Electronics
  • Description: SICFET N-CH 1200V 36A TO3P
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • TW070J120B,S1Q Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: TW070J120B,S1Q
  • Mfr: Toshiba Semiconductor and Storage
  • Description: SICFET N-CH 1200V 36A TO3P
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tube
  • Series: -
  • PartStatus: Active
  • FETType: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • DraintoSourceVoltage(Vdss): 1200 V
  • Current-ContinuousDrain(Id)@25°C: 36A (Tc)
  • DriveVoltage(MaxRdsOnMinRdsOn): 20V
  • RdsOn(Max)@IdVgs: 90mOhm @ 18A, 20V
  • Vgs(th)(Max)@Id: 5.8V @ 20mA
  • GateCharge(Qg)(Max)@Vgs: 67 nC @ 20 V
  • Vgs(Max): ±25V, -10V
  • InputCapacitance(Ciss)(Max)@Vds: 1680 pF @ 800 V
  • FETFeature: Standard
  • PowerDissipation(Max): 272W (Tc)
  • OperatingTemperature: -55°C ~ 175°C
  • MountingType: Through Hole
  • SupplierDevicePackage: TO-3P(N)
  • TW070J120B,S1Q | Toshiba Electronics | NHE Electronics
    • TW070J120B,S1Q were obtained directly from authorized Toshiba Electronics distributors and other trusted sources throughout the world.
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