Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI1077X-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V SC89-6
Product Attributes:
Part Number: SI1077X-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 20V SC89-6
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI1077X-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 33VWM 53.3VC DO215AB
DIODE SCHOTTKY 20A 80V TO-263AB
SFERNICE POTENTIOMETERS & TRIMME
FERRITE BEAD 120 OHM 1206 4LN
DIODE ZENER 10V 1W DO214AC
DIODE SCHOTTKY 1A 30V DO-220AA
Product Specifications:
MfrPart.: SI1077X-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 20V SC89-6Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 1.75A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 1.5V, 4.5VRdsOn(Max)@IdVgs: 78mOhm @ 1.8A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 31.1 nC @ 8 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 965 pF @ 10 VFETFeature: -PowerDissipation(Max): 330mW (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: SC-89 (SOT-563F)SI1077X-T1-GE3 | Vishay | NHE Electronics
SI1077X-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.