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    SI1926DL-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays, MOSFET 2N-CH 60V 0.37A SOT363
    SI1926DL-T1-GE3 Images
    SI1926DL-T1-GE3 Images
    Product Attributes：
  • Part Number: SI1926DL-T1-GE3
  • Manufacturer: Vishay
  • Description: MOSFET 2N-CH 60V 0.37A SOT363
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • SI1926DL-T1-GE3 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: SI1926DL-T1-GE3
  • Mfr: Vishay Siliconix
  • Description: MOSFET 2N-CH 60V 0.37A SOT363
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Arrays
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: TrenchFET®
  • PartStatus: Active
  • FETType: 2 N-Channel (Dual)
  • FETFeature: Logic Level Gate
  • DraintoSourceVoltage(Vdss): 60V
  • Current-ContinuousDrain(Id)@25°C: 370mA
  • RdsOn(Max)@IdVgs: 1.4Ohm @ 340mA, 10V
  • Vgs(th)(Max)@Id: 2.5V @ 250µA
  • GateCharge(Qg)(Max)@Vgs: 1.4nC @ 10V
  • InputCapacitance(Ciss)(Max)@Vds: 18.5pF @ 30V
  • Power-Max: 510mW
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • Package/Case: 6-TSSOP, SC-88, SOT-363
  • SI1926DL-T1-GE3 | Vishay | NHE Electronics
    • SI1926DL-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
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