Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI2305CDS-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 8V 5.8A SOT23-3
Product Attributes:
Part Number: SI2305CDS-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 8V 5.8A SOT23-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2305CDS-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
FUSE BOARD MNT 500MA 32VDC 0805
IC SWITCH QUAD SPST 16DIP
TVS DIODE 6.5VWM 11.2VC DO214AC
TVS DIODE 30.8VWM 49.9VC DO204AL
TVS DIODE 64VWM 103VC DO214AA
DIODE ZENER 8.2V 500MW DO35
Product Specifications:
MfrPart.: SI2305CDS-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 8V 5.8A SOT23-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 8 VCurrent-ContinuousDrain(Id)@25°C: 5.8A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 35mOhm @ 4.4A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 30 nC @ 8 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 960 pF @ 4 VFETFeature: -PowerDissipation(Max): 960mW (Ta), 1.7W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: SOT-23-3 (TO-236)SI2305CDS-T1-GE3 | Vishay | NHE Electronics
SI2305CDS-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.