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SI2307BDS-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 30V 2.5A SOT23-3
Product Attributes：
Part Number: SI2307BDS-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 30V 2.5A SOT23-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2307BDS-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SI2307BDS-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 30V 2.5A SOT23-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 30 VCurrent-ContinuousDrain(Id)@25°C: 2.5A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 10VRdsOn(Max)@IdVgs: 78mOhm @ 3.2A, 10VVgs(th)(Max)@Id: 3V @ 250µAGateCharge(Qg)(Max)@Vgs: 15 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 380 pF @ 15 VFETFeature: -PowerDissipation(Max): 750mW (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: SOT-23-3 (TO-236)SI2307BDS-T1-GE3 | Vishay | NHE Electronics
SI2307BDS-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
