Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI2315BDS-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 12V 3A SOT23-3
Product Attributes:
Part Number: SI2315BDS-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 12V 3A SOT23-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2315BDS-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
DIODE GEN PURP 400V 3A DO214AB
DIODE ZENER 8.7V 225MW SOT23-3
DIODE SCHOTTKY 45V 7.5A TO220AC
DIODE SCHOTTKY 30A 100V TO-262AA
DIODE ZENER 2.4V 500MW SOD80
SFERNICE POTENTIOMETERS & TRIMME
Product Specifications:
MfrPart.: SI2315BDS-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 12V 3A SOT23-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 12 VCurrent-ContinuousDrain(Id)@25°C: 3A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 4.5VRdsOn(Max)@IdVgs: 50mOhm @ 3.85A, 4.5VVgs(th)(Max)@Id: 900mV @ 250µAGateCharge(Qg)(Max)@Vgs: 15 nC @ 4.5 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 715 pF @ 6 VFETFeature: -PowerDissipation(Max): 750mW (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: SOT-23-3 (TO-236)SI2315BDS-T1-GE3 | Vishay | NHE Electronics
SI2315BDS-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.