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SI2319DDS-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 40V 2.7A/3.6A SOT23
Product Attributes：
Part Number: SI2319DDS-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 40V 2.7A/3.6A SOT23
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2319DDS-T1-GE3 Datasheet (PDF)
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Product Specifications：
MfrPart.: SI2319DDS-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 40V 2.7A/3.6A SOT23Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET® Gen IIIPartStatus: ActiveFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 40 VCurrent-ContinuousDrain(Id)@25°C: 2.7A (Ta), 3.6A (Tc)DriveVoltage(MaxRdsOnMinRdsOn): 4.5V, 10VRdsOn(Max)@IdVgs: 75mOhm @ 2.7A, 10VVgs(th)(Max)@Id: 2.5V @ 250µAGateCharge(Qg)(Max)@Vgs: 19 nC @ 10 VVgs(Max): ±20VInputCapacitance(Ciss)(Max)@Vds: 650 pF @ 20 VFETFeature: -PowerDissipation(Max): 1W (Ta), 1.7W (Tc)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: SOT-23-3 (TO-236)SI2319DDS-T1-GE3 | Vishay | NHE Electronics
SI2319DDS-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
