Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI2323DS-T1-GE3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 20V 3.7A SOT23-3
Product Attributes：
Part Number: SI2323DS-T1-GE3
Manufacturer: Vishay
Description: MOSFET P-CH 20V 3.7A SOT23-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2323DS-T1-GE3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
TVS DIODE 10VWM 18.8VC DO214AC
DIODE ARRAY GP 300V 5A TO263AB
DIODE ZENER 4.7V 1.25W DO214AC
SFERNICE POTENTIOMETERS & TRIMME
TVS DIODE 13VWM 21.5VC DO214AC
FIXED IND 10UH 130MA 3.7 OHM TH
Product Specifications：
MfrPart.: SI2323DS-T1-GE3Mfr: Vishay SiliconixDescription: MOSFET P-CH 20V 3.7A SOT23-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR),Cut Tape (CT)Series: TrenchFET®PartStatus: Not For New DesignsFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 20 VCurrent-ContinuousDrain(Id)@25°C: 3.7A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 39mOhm @ 4.7A, 4.5VVgs(th)(Max)@Id: 1V @ 250µAGateCharge(Qg)(Max)@Vgs: 19 nC @ 4.5 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 1020 pF @ 10 VFETFeature: -PowerDissipation(Max): 750mW (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: SOT-23-3 (TO-236)SI2323DS-T1-GE3 | Vishay | NHE Electronics
SI2323DS-T1-GE3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
