Industry Leading Semiconductor Distributor
Your Reliable and Professional Sourcing Partner
SI2331DS-T1-E3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 12V 3.2A SOT23-3
Product Attributes：
Part Number: SI2331DS-T1-E3
Manufacturer: Vishay
Description: MOSFET P-CH 12V 3.2A SOT23-3
Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
SI2331DS-T1-E3 Datasheet (PDF)
Order with confidence, there are no lead times for in-stock products.
For
Vishay, you may also be interested in the following:
SFERNICE POTENTIOMETERS & TRIMME
DIODE GEN PURP 1.6KV 40A TO247AC
DIODE SCHOTTKY 40V 15A D2PAK
DIODE SCHOTTKY 45V 10A TO263AB
TVS DIODE 43VWM 69.4VC P600
FIXED IND 15UH 4.9A 65.3MOHM SMD
Product Specifications：
MfrPart.: SI2331DS-T1-E3Mfr: Vishay SiliconixDescription: MOSFET P-CH 12V 3.2A SOT23-3Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - SinglePackage: Tape & Reel (TR)Series: TrenchFET®PartStatus: ObsoleteFETType: P-ChannelTechnology: MOSFET (Metal Oxide)DraintoSourceVoltage(Vdss): 12 VCurrent-ContinuousDrain(Id)@25°C: 3.2A (Ta)DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5VRdsOn(Max)@IdVgs: 48mOhm @ 3.6A, 4.5VVgs(th)(Max)@Id: 900mV @ 250µAGateCharge(Qg)(Max)@Vgs: 14 nC @ 4.5 VVgs(Max): ±8VInputCapacitance(Ciss)(Max)@Vds: 780 pF @ 6 VFETFeature: -PowerDissipation(Max): 710mW (Ta)OperatingTemperature: -55°C ~ 150°C (TJ)MountingType: Surface MountSupplierDevicePackage: SOT-23-3 (TO-236)SI2331DS-T1-E3 | Vishay | NHE Electronics
SI2331DS-T1-E3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
