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    SI2335DS-T1-E3, Vishay, Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single, MOSFET P-CH 12V 3.2A SOT23-3
    SI2335DS-T1-E3 Images
    SI2335DS-T1-E3 Images
    Product Attributes：
  • Part Number: SI2335DS-T1-E3
  • Manufacturer: Vishay
  • Description: MOSFET P-CH 12V 3.2A SOT23-3
  • Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • SI2335DS-T1-E3 Datasheet (PDF)
  • Order with confidence, there are no lead times for in-stock products.
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    Product Specifications：
  • MfrPart.: SI2335DS-T1-E3
  • Mfr: Vishay Siliconix
  • Description: MOSFET P-CH 12V 3.2A SOT23-3
  • Product Category: Discrete Semiconductor Products~Transistors - FETs, MOSFETs - Single
  • Package: Tape & Reel (TR),Cut Tape (CT)
  • Series: TrenchFET®
  • PartStatus: Obsolete
  • FETType: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • DraintoSourceVoltage(Vdss): 12 V
  • Current-ContinuousDrain(Id)@25°C: 3.2A (Ta)
  • DriveVoltage(MaxRdsOnMinRdsOn): 1.8V, 4.5V
  • RdsOn(Max)@IdVgs: 51mOhm @ 4A, 4.5V
  • Vgs(th)(Max)@Id: 450mV @ 250µA (Min)
  • GateCharge(Qg)(Max)@Vgs: 15 nC @ 4.5 V
  • Vgs(Max): ±8V
  • InputCapacitance(Ciss)(Max)@Vds: 1225 pF @ 6 V
  • FETFeature: -
  • PowerDissipation(Max): 750mW (Ta)
  • OperatingTemperature: -55°C ~ 150°C (TJ)
  • MountingType: Surface Mount
  • SupplierDevicePackage: SOT-23-3 (TO-236)
  • SI2335DS-T1-E3 | Vishay | NHE Electronics
    • SI2335DS-T1-E3 were obtained directly from authorized Vishay distributors and other trusted sources throughout the world.
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